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APTGF300A120 Phase leg NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tj = 150C V W 600A @ 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGF300A120 - Rev 1 March, 2004 Continuous Collector Current Tc = 25C Tc = 80C Tc = 25C Max ratings 1200 400 300 800 20 2080 Unit V A APTGF300A120 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 4mA VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 300A Tj = 125C VGE = VCE, IC = 12mA VGE = 20V, VCE = 0V Min 1200 Typ 0.4 25 3.3 4 Max 6 3.9 6.5 1 Unit V mA V V A 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (125C) VGE = 15V VBus = 600V IC = 300A RG = 2 Min Typ 21 2.9 1.52 70 50 500 30 17 18 Max Unit nF ns mJ Reverse diode ratings and characteristics Symbol Characteristic IF(AV) VF Qrr Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Charge Test Conditions 50% duty cycle Min Tc = 85C Typ 250 2.2 2.4 2.2 13 40 Max 2.5 Unit A V C IF = 300A IF = 400A IF = 400A IF = 300A Tj = 150C Tj = 25C Tj = 125C APT website - http://www.advancedpower.com 2-5 APTGF300A120 - Rev 1 March, 2004 APTGF300A120 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque For terminals Package Weight IGBT Diode 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Min Typ Max 0.06 0.13 Unit C/W V C N.m g M6 M5 Package outline APT website - http://www.advancedpower.com 3-5 APTGF300A120 - Rev 1 March, 2004 APTGF300A120 Typical Performance Curve Output characteristics (VGE=15V) 450 Ic, Collector current (A) Ic, Collector current (A) 400 350 300 250 200 150 100 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle Output characteristics (VGE=10V) 350 300 250 200 150 100 50 0 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 300A TJ = 25 C VCE=600V 4 TJ=125 C 250s Pulse Test < 0.5% Duty cycle TJ=25 C TJ=25C TJ=125 C 500 400 300 200 100 0 4 VGE, Gate to Emitter Voltage (V) 600 Ic, Collector Current (A) 20 16 12 8 4 0 0 500 VCE=800V 6 8 10 VGE, Gate to Emitter Voltage (V) 12 1000 1500 2000 Gate Charge (nC) 2500 1000 Switching times vs collector current 100 C, Capacitance (nF) Capacitance vs Collector to Emitter Voltage tdoff VCE = 600V VGE=15V RG=2 TJ = 125C Cies 10 Coes Cres time (ns) 100 tdon tf tr 10 0 100 200 300 Ic, Collector current (A) 400 1 0 VCE, Collector to Emitter Voltage (V) 10 20 30 Switching energy losses vs Gate resistance 120 Switching Energy losses (mJ) DC Collector Current vs Case Temperature 400 Ic, DC Collector Current (A) 350 300 250 150 100 50 0 0 25 50 75 100 125 TC, Case Temperature (C) 150 200 100 80 60 40 20 0 0 VCE = 600V VGE=15V IC=300A TJ = 125C Eon Eoff 2 4 6 8 10 12 Gate resistance (Ohms) 14 16 APT website - http://www.advancedpower.com 4-5 APTGF300A120 - Rev 1 March, 2004 APTGF300A120 Minimum Switching Safe Operating Area 700 IC, Collector current (A) 600 500 400 300 200 100 0 0 300 600 900 1200 1500 VCE, Collector to Emitter Voltage (V) 10 0 5 10 15 Gate resistance (Ohms) 20 1000 tdon 100 tr tf 10000 Switching times vs gate resistor VCE = 600V, VGE=15V IC=300A, TJ = 125C time (ns) tdoff Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.1 0.05 0 0.00001 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 50 100 150 200 250 300 350 IC, Collector Current (A) 400 VCE = 800V D = 50% RG = 2 TJ = 125C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGF300A120 - Rev 1 March, 2004 |
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